Mechanism of current leakage through metal/n-GaN interfaces

Leakage mechanism in GaN and AlGaN Schottky interfaces

Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy

Temperature-dependent current-voltage measurements combined with conductive atomic force microscopy and analytical modeling have been used to assess possible mechanisms of reverse-bias leakage current flow in Schottky diodes fabricated from GaN and Al0.25Ga0.75N/GaN structures grown by molecular-beam epitaxy. Below 150 K, leakage current is nearly independent of temperature, indicating that con...

Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

This study examined the effect of electronbeam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from 4.0×10 -4 A, 6.5×10 -5 A, 2.7×10 -8 A to 7.7×10 -5 A, 7.7×10 -6 A, 4.7×10 -9 A, respectively, at a drain volta...

Improved Leakage Current, Output Power, and Electrostatic Discharge Characteristics of GaN LEDs by Chemical Etching

We report the effect of chemical etching of p-GaN using molten KOH:NaOH solution on leakage currents, light output power, and electrostatic discharge ESD characteristics of GaN light-emitting diodes LEDs . Photoluminescence and capacitance–voltage measurement indicated that a deep donor–acceptor pair DDAP was densely concentrated near the p-GaN surface region 18 nm and the defects were effectiv...

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

In this paper, leakage current signatures in AlGaN HEMT are studied after storage at 300°C. By comparing gate pad topology and by localized FIB cuts, Optical Beam Induce Resistance Change (OBIRCh) analysis was used to localize current path. Results tend to indicate that mechanical stresses in the gate structure strongly influences the leakage current of the transistor. Electrical characterizati...